SATAsphere 2.5″ SATA II SSD (Solid State Drive)

2.5" SATA II SATAquest SSDThe amp inc 2.5″ SATA II Solid SSD is a flash based disk drive with SATA 2.6 compliant interface. It provides fast read and write speeds, high reliability and its data protection make it an ideal storage solution for the server and mobile environment. It is built with Single Level Cell (SLC) or Multi Level Cell (MLC) NAND Flash which is cost effective and provides exceptional reliability and performance. Due to its non mechanical nature, it has higher shock resistance and lower access time than traditional rotating hard disk drives. Built-in ECC and EDC ensuring error-free transactions for the most demanding applications.

Client Class

amp inc MLC Part Number Capacity
AMP25S025-NM7RBC(I,M) 25GB
AMP25S050-NM8RBC(I,M) 50GB
AMP25S060-NM8RBC(I,M) 60GB
AMP25S100-NM9RBC(I,M) 100GB
AMP25S120-NM9RBC(I,M) 120GB
AMP25S160-NM1RBC(I,M) 160GB
AMP25S200-NM1RBC(I,M) 200GB
AMP25S240-NM1RBC(I,M) 240GB
AMP25S400-NM2RBC(I,M) 400GB
AMP25S480-NM2RBC(I,M) 480GB

 

  

amp inc SLC Part Number Capacity
AMP25S025-NS7RBC(I,M) 25GB
AMP25S050-NS8RBC(I,M) 50GB
AMP25S060-NS8RBC(I,M) 60GB
AMP25S120-NS1RBC(I,M) 120GB
AMP25S240-NS1RBC(I,M) 240GB


* C = Commercial Temperature
* I = Industrial Temperature
* M = Commercial NAND tested to -20°C to +85°C

 SandForce Driven
FORM FACTOR
2.5″ Type (100.20 x 69.85 x 9.50) mm
CAPACITY
25GB-480GB
HOST INTERFACE
SATA 2.6 Compliant, 3 GB/s and 1.5 GB/s support
Native Command Queuing (up to 32 commands)
SMART Command Transport (basic)
PERFORMANCE
Sequential Read transfer: Up to 260MB/s (@128K blocks)
Sequential Write transfer: Up to 260MB/s (@128K blocks)
Random Read IOPS: 30,000(@4K blocks)
Random Write IOPS: 30,000 burst/10,000 sustained (@4K blocks)
PCMark05: 40,000 (HDD test suite score)
PCMark Vantage: 43,000 (HDD test suite score)
RELIABILITY
Technology

DuraClass technology represents a set of NAND flash management features that work in tandem to deliver world class SSD reliability, performance and power efficiency that differentiate AMP Inc.’s SSD’s from competative solutions. Of particular importance is the use of processing elements to optimally overcome a number of the inherent issues associated with commodity NAND flash memory. Duraclass features include:

  • DuraWrite, which optimizes the number of program cycles to the flash effectively extending flash rated endurance by 20x or more when compared to standard controllers.
  • RAISE (Redundant Array of Independent Silicon Elements), which deliver an orders-of-magnitude improvement in drive reliability versus today’s best enterprise HDDs and SSDs. The result is single-drive RAID-like protection and recovery from potentially catastrophic flash block failures – all while avoiding the inefficiencies of traditional RAID
  • Advanced Wear Leveling and Monitoring, Optimized wear leveling algorithms further extending flash endurance.
  • Advanced Read/Program Disturb Management, which safeguards against errant reprogramming of cells during read and program cycles.
  • Recycler, which intelligently performs garbage collection with the least impact on flash
    endurance.
MTBF (Mean Time between Failures): 2M hours (MAX), True MTBF calculations must be based on configuration and usage requirements.
ECC Recovery: Up to 24 bytes correctable per 512-byte sector.
Unrecoverable Read Errors: Read unrecoverable bit error rate (UBER) 10e-16
Data Encryption: 128-bit AES-compliant / Optional disk password
Protect Health Monitoring: Self-Monitoring, Analysis and Reporting Technology (SMART) w/ enterprise attributes
Operating System: Windows XP 32-Bit and 64-Bit; Windows Vista 32-Bit & 64Bit; Windows 7 32-Bit & 64-Bit; Linux; Solaris 10
Power Requirements: Standard SATA Power Connector 5V
Performance Optimization: TRIM (requires OS support)
POWER CONSUMPTION
Input voltage: + 5VDC, 5%( 4.75V ∼ 5.25V)
2W in operation
.5W in standby
ENVIRONMENTAL
Temperature
Operating: 0°C ∼ 70°C (Commercial)
-40°C ∼ 85°C (Industrial)

Shock
Operating: 50G, duration 11ms, Half SineWave
Non-Operating: 1500G, duration 0.5ms, Half SineWave

Vibration
Operating: 16.4G Peak, 10∼2000Hz, x3 Axis
RoHS
RoHS Compliant (Lead Free)
SPECIFICATION SUMMARY TABLE
Drive Specification
Capacity 25GB – 480GB
Sustained data transfer rate(read) 260 MB/sec
Sustained data transfer rate(write) 260 MB/sec
Channels 4
Media type Multi Layer Cell (MLC) NAND Flash
Random 4K IOPS(read) 30 K
Random 4K IOPS(write) 30 K
Interface Serial ATA 2.6
I/O data-transfer rate 300 Mbytes/sec
ATA data-transfer modes supported PIO modes 0-4, Ultra DMA modes 0-6
Height 9.50 ± 0.1mm
Width 69.85 ± 0.1mm
Length 100.2 ± 0.1mm
Weight (grams) 78
Continue read power (Typical)** 2.0 watts
Continue write power (Typical)** 2.0 watts
Idle mode power (Typical)** 0.5 watts
Standby mode power (Typical)** 0.5 watts
Sleep mode power (Typical)** 0.25 watts
Voltage tolerance (including noise) 5V ± 5%
Ambient temperature 0° to 70°C Commercial
-40° to 85°C Industrial
Temperature gradient 20°C (operating)
Relative humidity
(non-condensing)		 50% to 95% (non-operating)
Relative humidity gradient 30% per hour max
Drive acoustics, sound power (dB) 0
Non-recoverable read errors < 1 per 1016 bits read
Mean Time Before Failure (MTBF) 2 M hours (max)
Altitude 0-80000(ft)/0-24(km.)
Service life 5 years
Warranty 2 years

** Typical value under room temperature

Benchmark Test 64 GB Clean Unit
PCMark 05 Overall Score 47,000 Point
XP Startup 156 MB/s
Application Loading 115 MB/s
General HDD Usage 180 MB/s
Virus Scan 220 MB/s
File Write 152.030 MB/s
Iometer 2006.07.27 Sequential write 128KB 250 MB/s
Sequential Read 128KB 250 MB/s
Random Write 4KB 30,000 IOPS
Random Read 4KB 30,000 IOPS

 
POWER SPECIFICATIONS
The drive receives DC power (+5V) through the interface connector.
CONDUCTED NOISE
Input noise ripple is measured at the host system power supply across an equivalent 25-ohm resistive loading on the +5 volt line.

Using 5V power, the drive is expected to operate with a maximum of 100 mV peak-to-peak square-wave injected noise at up to 10 MHz.

Note: Equivalent resistance is calculated by dividing the nominal voltage by the typical RMS read/write current.